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dg306ae25 1/19 applications n variable speed a.c. motor drive inverters (vsd-ac) n uninterruptable power supplies n high voltage converters n choppers n welding n induction heating n dc/dc converters features n double side cooling n high reliability in service n high voltage capability n fault protection without fuses n high surge current capability n turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements key parameters i tcm 600a v drm 2500v i t(av) 225a dv d /dt 1000v/ m s di t /dt 300a/ m s outline type code: e. see package details for further information. voltage ratings current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled. half sine 50hz. v d = 67%v drm , t j = 125 o c, di gq /dt =15a/ m s, cs = 1.0 m f rms on-state current a a a 600 225 350 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled. half sine 50hz. i t(rms) i t(av) mean on-state current 2500 dg306ae25 conditions type number t vj = 125 o c, i dm = 50ma, i rrm = 50ma, v rg = 2v repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 dg306ae25 gate turn-off thyristor ds4099-5 january 2014 (ln31739)
dg306ae25 2/19 surge ratings conditions 3.5 61250 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 500 v/ m s max. units rate of rise of off-state voltage peak stray inductance in snubber circuit dv d /dt 200 nh 1000 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 2000v, i t = 600a, t j = 125 o c, i fg > 20a, rise time > 1.0 m s a/ m s to 66% v drm ; r gk 1.5 w , t j = 125 o c l s gate ratings symbol parameter conditions v units max. 16 10 min. - - - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 6 50 -20 10 - - m s 40 50 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) m s a/ m s kw w a thermal ratings symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.20 - 0.018 o c/w per contact cathode side cooled double side cooled units - 0.075 o c/w anode side cooled o c/w 0.12 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force - 125 6.0 5.0 -40 kn o c/w clamping force 6.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c -
dg306ae25 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50- turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 1300 v rgm = 16v, no gate/cathode resistor m c i t =600a, v dm = 2000v snubber cap cs = 1.0 m f, di gq /dt = 15a/ m s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 2.75 v v drm = 2500v, v rg = 0v - 50 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 0.9 v v d = 24v, i t = 100a, t j = 25 o c - 1.0 a ma mj 515- v d = 2000v i t = 600a, di t /dt = 300a/ m s i fg = 20a, rise time < 1.0 m s m s 1.5- - 3.0 m s - 1000 mj - 11.4 m s m s 1.5- m s 12.9- - 2600 m c - 190 a at 600a peak, i g(on) = 2a d.c.
dg306ae25 4/19 curves -50 -25 0 25 50 75 100 125 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) 2.0 1.5 1.0 0.5 0 gate trigger current i gt - (a) junction temperature t j - (c) v gt i gt 0 fig.1 gate trigger voltage/curremt vs junction temperature 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage - (v) 500 1000 1500 2000 instantaneous on-state current - (a) t j = 125c t j = 25c measured under pulse conditions i g(on) = 2a half sine wave 10ms 0 6.0 0 fig.2 maximum limit on-state characteristics
dg306ae25 5/19 0 0.5 1.0 1.5 2.0 snubber capacitance cs - (f) 250 500 1000 750 maximum permissible turn-off current i tcm - (a) conditions: t j = 125c, v dm = 1500v di gq /dt = 15a/s fig.3 dependence of i tcm on cs fig.4 maximum (limit) transient thermal impedance - double side cooled 0 0.025 0.050 0.075 0.001 0.01 0.1 1.0 10 time - s thermal impedance - c/w dc fig.5 surge (non-repetitive) on-state current vs time 0.0001 0.001 0.01 0.1 1.0 pulse duration - ( s ) 0 2.5 5.0 7.5 10.0 peak half sine wave on-state current - (ka) 12.5
dg306ae25 6/19 0 100 200 350300 65 70 80 90 100 110 maximum permissible case temperature - (c) mean on-state current - (a) 0 100 200 300 400 500 600 700 800 mean on-state power dissipation - (w) 180 120 60 30 dc conditions; i g(on) = 2a 120 130 fig.6 steady state rectangular wave conduction loss - double side cooled 0 100 200 80 90 100 140 maximum permissible case temperature - (c) mean on-state current - (a) 0 100 200 300 400 500 600 mean on-state power dissipation- (w) 180 120 60 30 90 conditions; i g(on) = 2a 300 110 120 130 fig.7 steady state sinusoidal wave conduction loss - double side cooled
dg306ae25 7/19 0 100 200 300 400 500 on-state current - (a) 0 50 100 150 200 250 300 350 400 turn-on energy loss e on - (mj) 600 v d = 2000v v d = 1500v v d = 1000v conditions: t j = 25c i fgm = 20a cs = 1.0f rs = 10 ohms di/dt = 300a/s di fg /dt = 20a/s fig.8 turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 100 150 200 250 300 350 400 450 500 turn-on energy loss e on - (mj) conditions: i t = 600a, t j = 25c, cs = 1.0f, rs = 10 ohms, di t /dt = 300a/s, di fg /dt = 20a/s v d = 2000v v d = 1500v v d = 1000v fig.9 turn-on energy vs peak forward gate current
dg306ae25 8/19 0 100 200 300 400 600 500 on-state current - (a) 0 100 200 300 400 500 600 turn-on energy loss e on - (mj) conditions: t j = 125c i fgm = 20a cs = 1.0f rs = 10 ohms di t /dt = 300a/s v d = 1500v v d = 2000v v d = 1000v fig.10 turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 200 250 300 350 400 450 500 550 600 turn-on energy loss e on - (mj) 650 700 conditions: i t = 600a t j = 125c cs = 1.0f rs = 10 ohms di t /dt = 300a/s di fg /dt = 20a/s v d = 2000v v d = 1500v v d = 1000v 0 50 100 150 200 250 300 rate of rise of on-state current di t /dt - (a/s) 50 150 250 350 450 turn-on energy loss e on - (mj) conditions: i t = 600a t j = 125c cs = 1.0f rs = 10 ohms i fgm = 20a v d = 1500v 550 v d = 2000v v d = 1000v 500 400 300 200 100 fig.11 turn-on energy vs peak forward gate current fig.12 turn-on energy vs rate of rise of on-state current
dg306ae25 9/19 0 100 200 300 400 600 500 on-state current - ( a ) 0 0.5 1.0 1.5 2.0 2.5 3.0 turn-on delay time and rise time - (s) t r t d conditions: t j = 125c, i fgm = 20a cs = 1.0f, rs = 10 ohms, di t /dt = 300a/s, v d = 1500v fig.13 delay & rise time vs turn-on current 0 1020304050607080 peak forward gate current i fgm - (a) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 turn-on delay time and rise time - (s) 4.5 5.0 conditions: i t = 600a t j = 125c cs = 1.0f rs = 10 ohms di t /dt = 300a/s di fg /dt = 20a/s v d = 1500v t d t r fig.14 delay time & rise time vs peak forward gate current
dg306ae25 10/19 0 100 200 300 400 600 500 on-state current - (a) 50 100 150 200 250 300 350 turn-off energy loss e off - (mj) conditions: t j = 25c cs = 1.0f di gq /dt = 15a/s 400 450 v dm = 1000v v dm = 1500v v dm = 2000v 500 550 fig.15 turn-off energy loss vs on-state current 10 15 20 25 30 35 40 45 50 rate of rise of reverse gate current di gq /dt- (a/s) 350 375 400 425 450 475 500 525 550 turn-off energy per pulse e off - (mj) 575 conditions: i t = 600a t j = 25c cs = 1.0f v dm = 2000v v dm = 1500v v dm = 1000v fig.16 turn-off energy vs rate of rise of reverse gate current
dg306ae25 11/19 0 100 200 300 400 500 600 on-state current - (a) 100 200 300 400 500 600 700 turn-off energy loss e off - (mj) conditions: t j = 125c cs = 1.0f di gq /dt = 15a/s v dm = 1500v v dm = 2000v v dm = 1000v 900 800 1000 fig.17 turn-off energy vs on-state current 10 15 20 25 30 35 40 45 50 rate of rise of reverse gate current di gq /dt- (a/s) 600 700 800 900 1000 turn-off energy per pulse e off - (mj) conditions: i t = 600a t j = 125c cs = 1.0f v dm = 1000v v dm = 1500v v dm = 2000v 1100 fig.18 turn-off energy loss vs rate of rise of reverse gate current
dg306ae25 12/19 0 100 200 300 400 500 600 on-state current - (a) 0 100 200 300 400 500 600 turn-off energy per pulse e off - (mj) conditions: t j = 125c v dm = 1500v di gq /dt = 15a/s cs = 1.5f cs = 1.0f cs = 2.0f 800 700 700 800 900 fig.19 turn-off energy vs on-state current 0 100 200 300 400 500 600 on-state current - (a) 4.0 6.0 8.0 10.0 gate storage time t gs - (s) conditions: cs = 1.0f di gq /dt = 15a/s t j = 25c t j = 125c 12.0 5.0 7.0 9.0 11.0 fig.20 gate storage time vs on-state current
dg306ae25 13/19 10 15 20 25 30 35 40 45 50 rate of rise of reverse gate current di gq /dt - (a/s) 5.0 7.5 10.0 12.5 15.0 gate storage time t gs - (s) 17.5 conditions: i t = 600a cs = 1.0f t j = 125c t j = 25c fig.21 gate storage time vs rate of rise of reverse gate current 0 100 200 300 400 500 600 on-state current - (a) 0.5 1.0 1.5 2.0 gate fall time t gf - (s) conditions: cs = 1.0f di gq /dt = 15a/s t j = 125c t j = 25c 0.0 fig.22 gate fall time vs on-state current
dg306ae25 14/19 10 15 20 25 30 35 40 45 50 rate of rise of reverse gate current di gq /dt - (a/s) 0.5 0.5 1.0 1.5 2.0 gate fall time t gf - (s) conditions: i t = 600a cs = 1.0f t j = 125c t j = 25c fig.23 gate fall time vs rate of rise of revese gate current 0 100 200 300 400 500 600 on-state current - (a) 0 50 100 150 peak reverse gate current i gqm - (a) conditions: cs = 1.0f di gq /dt = 15a/s t j = 125c t j = 25c 200 175 125 75 25 fig.24 peak reverse gate current vs on-state voltage
dg306ae25 15/19 10 15 20 25 30 35 40 45 50 rate of rise of reverse gate current di g q /dt - (a/s) 100 150 200 250 peak reverse gate current i gqm - (a) 300 conditions: i t = 600a cs = 1.0f t j = 125c t j = 25c fig.25 reverse gate current vs rate of rise of reverse gate current 0 100 200 300 400 500 600 on-state current - ( a ) 125 375 625 875 turn-off gate charge q gq - (c) conditions: v dm = 1500v di gq /dt = 15a/s t j = 125c t j = 25c 1125 250 500 750 1000 1250 1375 fig.26 turn-off gatecharge vs on-state voltage
dg306ae25 16/19 0 5 10 15 20 25 30 35 40 rate of rise of reverse gate current di gq /dt - (a/s) 800 1000 1200 1400 1600 turn-off gate charge q gq - (c) conditions: i t = 600a cs = 1.0f t j = 25c t j = 125c fig.27 turn-off gate charge vs rate of rise or reverse gate current 1 10 gate cathode resistance r gk - (ohms) 10 50 100 1000 rate of rise of off-state voltage dv/dt - (v/s) 3000 v d =1500v fig.28 typical rate of rise of off-state voltage vs gate cathode resistance
dg306ae25 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 600a i fg = 20a i g(on) = 2a d.c. t w1(min) = 10s i gqm = 190a di gq /dt = 15a/s q gq = 1300c v rg(min) = 2.0v v rg(max) = 16v these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications. fig.29 general switching waveforms
dg306ae25 18/19 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwise. do not scale. 2 holes ?3.6 0.1 x 2.0 0.1 deep (one in each electrode) 15 14 cathode anode ?25nom. ?42max ?25nom. 30 15 gate nominal weight: 82g clamping force: 6kn 10% package outine type code: e cathode tab associated publications title application note number calculating the junction temperature or power semiconductors an4506 gto gate drive units an4571 recommendations for clamping power semiconductors an4839 use of v to , r t on-state characteristic an5001 impoved gate drive for gto series connections an5177
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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